| PART |
Description |
Maker |
| K4X51163PG-FGC6 K4X51163PG-FGC8 |
32Mx16 Mobile DDR SDRAM
|
Samsung Electronics
|
| HYB25D512160BE-5 HYB25D512800BC-5 HYB25D512800BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
|
Infineon
|
| K4X1G323PC-L |
32Mx32 Mobile DDR SDRAM
|
Samsung semiconductor
|
| K4X56163P-L K4X56163PI-LFE_GC3 K4X56163PI-LFE_GC6 |
16Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| EMD12164P-60 EMD12164P-75 |
512M: 32M x 16 Mobile DDR SDRAM
|
Emerging Memory & Logic Solutions Inc
|
| IS43LR16800F-6BLI |
2M x 16Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solution...
|
| K4X56163PG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
| HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块)
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块（2.584脚，512M的位寄存型的DDR - SDRAM内存模块余）
|
SIEMENS AG
|
| MT46H16M16LF MT46H8M32LF |
Mobile Double Data Rate (DDR) SDRAM
|
MICRON[Micron Technology]
|
| H5MS5122DFR H5MS5132DFR |
Mobile DDR SDRAM 512Mbit (16M x 32bit)
|
Hynix Semiconductor
|
| MT46H8M16LF |
Mobile Double Data Rate (DDR) SDRAM
|
MICRON[Micron Technology]
|
